NXP’s leading-edge LDMOS technology delivers a 700 W RF power device in small footprint
HONOLULU, June 06, 2017 (GLOBE NEWSWIRE) -- IMS 2017 – NXP Semiconductors N.V. (NASDAQ:NXPI), the leader in RF power, today announced the industry’s most compact RF laterally diffused metal oxide semiconductor (LDMOS) solution for the automatic dependent surveillance-broadcast (ADS-B) and unmanned aerial vehicle (UAV) transponder markets. With more than 700 watts (W) of pulsed power packed in a 50 ohm power amplifier half the size of a credit card, the AFV10700H meets the size, weight, power and cost (SWaP-C) requirements of the aeronautics industry.
The AFV10700H is based on NXP’s leading-edge Airfa...
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