Six new transistors meet customers’ requirements for delivering high performance while reducing size, weight, and power consumption
SAN FRANCISCO, May 25, 2016 (GLOBE NEWSWIRE) -- NXP Semiconductors N.V. (NASDAQ:NXPI), today expanded its portfolio of broadband gallium nitride (GaN) RF power transistors ideal for electronic warfare and battlefield radio applications. The expansion includes six new driver or final-stage amplifiers that have frequency coverage as broad as 1 to 3000 MHz.
The new GaN on SiC transistors combine high power density, ruggedness, and very flat frequency response over wide bandwidths. All are input matched to optimize operating frequency range, and can withstand a...
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