NXP Introduces New High Performance GaN RF Power Transistors for Cellular Base Stations

Four new Doherty amplifier-optimized transistors provide the high power, small footprints and higher frequencies required of next-generation RF power amplifiers SAN FRANCISCO, May 25, 2016 (GLOBE NEWSWIRE) -- NXP Semiconductors N.V. (NASDAQ:NXPI), today announced an expansion to its portfolio of 48V Gallium Nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies. With the wireless spectrum shortage, wireless carriers are exploring higher freq...