Eight new devices cover all cellular bands from 700 to 3800 MHz
SAN FRANCISCO, May 25, 2016 (GLOBE NEWSWIRE) -- (IMS 2016) – NXP Semiconductors N.V. (NASDAQ:NXPI), today introduced the industry’s largest portfolio of broadband 28V LDMOS two-stage, dual-path Doherty-optimized Integrated Circuits (ICs) for small cell base stations. As part of NXP’s leading RF power transistor portfolio, the new LDMOS ICs are designed to provide RF power, efficiency, and gain in all current and proposed frequency bands, from 700 to 3800 MHz, with RF output power of 2.5 to 12 W.
“The need to provide quality coverage and service to mobile phone subscribers both indoors and outdoors drives the rapid increase ...
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